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To eliminate both conditions, the solution in which the board is rinsed just before final water-spray rinsing should be 5 percent by volume hydrochloric acid 5 Waste disposal Spent or by-product etchant is usually sent off-site for copper reclamation There is usually a fee for this service depending on copper content and distance to the reclamation facility The solutions must be free of unreacted oxidizer (see previous chlorate system discussion) Etchant can contain traces of zinc, chromium, and arsenic from the foil treatments..

C = 1 Btu/(lb)( F)

Sulfuric Acid Hydrogen Sulfuric-peroxide systems are used extensively for copper surface preparation by microetching the surface to provide texture and active surfaces. These formulations have been used in

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the past for primary circuitization etching but are no longer favored because of slow etch rate and needs for accompanying control of exotherm and copper crystallization. However, the increasing need for fine-line etching has renewed use possibilities for this and other etchants (see Sec. 34.7.4). In essence, these call for etching foils thinner than 1 2 oz and the control precision offered by slower etchants. They are compatible with metal resists and many organics. 34.4.3.1 Chemistry. Typical constituents of both immersion and spray etchants and their functions are as follows: 1. 2. 3. 4. 5. 6. Hydrogen peroxide is an oxidizing agent that reacts with and dissolves metallic copper. Sulfuric acid makes copper soluble and holds copper sulfate in solution. Copper sulfate helps to stabilize etch and recovery rates. Molybdenum ion is an oxidizing agent and rate exaltant.22 Aryl sulfonic acids are peroxide stabilizers.23 Thiosulfates are rate exaltants and chloride ion controllers that permit lower peroxide content.24 7. Phosphoric acid retains clean solder traces and plated through-holes.25,26 The etching reaction is as follows: Cu + H2O2 + H2SO4 CuSO4 + 2H2O (34.11)

A change of 1 psi from the controller changes the flow rate of heat q by 500 Btuhnin. The temperature of the inlet stream may vary. The= is no lag in the measuring element. (a) Draw a block diagram of the control system with the appropriate transfer function in each block. Each transfer function should contain numerical values of the parameters. (b) From the block diagram, determine the overall transfer function relating the temperature in tank 3 to a change in set point. (c) Find the offset for a unit-step change in inlet temperature if the controller gain K, is 3 psi per OF of tempera- error and the derivative time is 0.5 min. 13.7. (a) For the control system shown in Fig. P13.7, obtain the closed-loop transfer function C/U. (b) Find the value of K, for which the closed-loop response has a f of 2.3. (c) Find the offset for a unit-step change in U if Kc = 4.

The liquid can oscillate on the surface and in the U tube. Rut since the largest resonant period is alwars the limiting one, only the period of the L tube is important To = 3.6 ft + 4.4 ft $4 = 2.2 set 2T [2(32.2 ft/se ) (2.2/60) (6.28)(l !%o)

34.4.3.2 Properties and Control. The earlier technical problems of slow etch rates, peroxide decomposition, and foaming in spray systems have been solved, but critical concerns still remain. Among these are process overheating, etchant composition balance with by-product recovery, etchant contamination, and the dangers of handling concentrated peroxide solutions. The specific problem of decomposition of peroxide during idle hours has caused disastrous equipment meltdowns, and thus requires thermal management while equipment is otherwise not in operation. 34.4.3.3 Closed-Loop Systems. Production facilities require continuous recirculation of the etchant through the etching tank or machine and the copper sulfate recovery operation. Etchant replenishment is controlled by chemical analysis and by additions of concentrates. Copper sulfate recovery is based on lowering the solubility of CuSO4 5H2O by decreasing the etchant temperature to 50 to 70 F. Crystallizer equipment and conveyorized discharge has been available for this process. 34.4.3.4 Problems Encountered with Peroxide Systems

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